Adding new capabilities to silicon CMOS integrated circuits via deterministic assembly

Jaekyun Kim, Thomas J. Morrow, Lan Lin, Christine D. Keating, Jeffrey S. Mayer, Theresa S. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electric-field-assisted deterministic assembly is used to position individual nanowires in high density arrays on silicon integrated circuits. Forces induced on the solution-suspended nanowires by a spatially varying, nonuniform electric field determines the position of each wire with respect to lithographic features on the circuit. Two electrode structures used to create the spatial variations in field strength are compared experimentally and theoretically. This technique is applied to fabricate bioprobe-coated nanowire resonator device arrays for chip-based sensing applications.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages231-237
Number of pages7
Edition6
DOIs
StatePublished - Dec 1 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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