Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

Rongming Chu, Y. G. Zhou, K. J. Chen, K. M. Lau

Research output: Contribution to journalConference article

20 Citations (Scopus)

Abstract

We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

Original languageEnglish (US)
Pages (from-to)2400-2403
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
StatePublished - Dec 1 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

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electrical impedance
traps
equivalent circuits
time constant
energy distribution
frequency ranges
trapping

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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abstract = "We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.",
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Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures. / Chu, Rongming; Zhou, Y. G.; Chen, K. J.; Lau, K. M.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2400-2403.

Research output: Contribution to journalConference article

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T1 - Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

AU - Chu, Rongming

AU - Zhou, Y. G.

AU - Chen, K. J.

AU - Lau, K. M.

PY - 2003/12/1

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N2 - We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

AB - We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

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