Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band

Jon F. Ihlefeld, Wei Tian, Zi Kui Liu, W. Alan Doolittle, Margitta Bernhagen, Peter Reiche, Reinhard Uecker, Ramamoorthy Rramesh, Darrell G. Schlom

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.

Original languageEnglish (US)
Article number5183578
Pages (from-to)1528-1533
Number of pages6
JournalIEEE transactions on ultrasonics, ferroelectrics, and frequency control
Volume56
Issue number8
DOIs
StatePublished - Aug 1 2009

Fingerprint

Molecular beam epitaxy
broadband
Bismuth
Adsorption
Thin films
adsorption
thin films
bismuth oxides
differential pressure
overpressure
supplying
Epitaxial films
High electron mobility transistors
Buffer layers
Full width at half maximum
high electron mobility transistors
Vapor pressure
Epitaxial growth
Stoichiometry
bismuth

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

Cite this

Ihlefeld, Jon F. ; Tian, Wei ; Liu, Zi Kui ; Doolittle, W. Alan ; Bernhagen, Margitta ; Reiche, Peter ; Uecker, Reinhard ; Rramesh, Ramamoorthy ; Schlom, Darrell G. / Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band. In: IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2009 ; Vol. 56, No. 8. pp. 1528-1533.
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abstract = "BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.",
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Ihlefeld, JF, Tian, W, Liu, ZK, Doolittle, WA, Bernhagen, M, Reiche, P, Uecker, R, Rramesh, R & Schlom, DG 2009, 'Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band', IEEE transactions on ultrasonics, ferroelectrics, and frequency control, vol. 56, no. 8, 5183578, pp. 1528-1533. https://doi.org/10.1109/TUFFC.2009.1216

Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band. / Ihlefeld, Jon F.; Tian, Wei; Liu, Zi Kui; Doolittle, W. Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Rramesh, Ramamoorthy; Schlom, Darrell G.

In: IEEE transactions on ultrasonics, ferroelectrics, and frequency control, Vol. 56, No. 8, 5183578, 01.08.2009, p. 1528-1533.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band

AU - Ihlefeld, Jon F.

AU - Tian, Wei

AU - Liu, Zi Kui

AU - Doolittle, W. Alan

AU - Bernhagen, Margitta

AU - Reiche, Peter

AU - Uecker, Reinhard

AU - Rramesh, Ramamoorthy

AU - Schlom, Darrell G.

PY - 2009/8/1

Y1 - 2009/8/1

N2 - BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.

AB - BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.

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