TY - JOUR
T1 - Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band
AU - Ihlefeld, Jon F.
AU - Tian, Wei
AU - Liu, Zi Kui
AU - Doolittle, W. Alan
AU - Bernhagen, Margitta
AU - Reiche, Peter
AU - Uecker, Reinhard
AU - Rramesh, Ramamoorthy
AU - Schlom, Darrell G.
N1 - Funding Information:
Manuscript received august 29, 2008; accepted december 23, 2008. This work was supported by the office of naval research through grant no. n00014-04-1-0426, monitored by dr. colin Wood, and by the director, office of science, office of Basic Energy sciences, Materials science and Engineering division, U.s. department of Energy under contract no. dE-ac02-05cH11231.
PY - 2009/8
Y1 - 2009/8
N2 - BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.
AB - BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.
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U2 - 10.1109/TUFFC.2009.1216
DO - 10.1109/TUFFC.2009.1216
M3 - Article
C2 - 19686967
AN - SCOPUS:68749091300
SN - 0885-3010
VL - 56
SP - 1528
EP - 1533
JO - IEEE Transactions on Sonics and Ultrasonics
JF - IEEE Transactions on Sonics and Ultrasonics
IS - 8
M1 - 5183578
ER -