Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom

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Abstract

We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

Original languageEnglish (US)
Article number262905
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
StatePublished - Jun 28 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Lee, J. H., Ke, X., Misra, R., Ihlefeld, J. F., Xu, X. S., Mei, Z. G., Heeg, T., Roeckerath, M., Schubert, J., Liu, Z. K., Musfeldt, J. L., Schiffer, P., & Schlom, D. G. (2010). Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy. Applied Physics Letters, 96(26), [262905]. https://doi.org/10.1063/1.3457786