Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

Original languageEnglish (US)
Article number262905
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
StatePublished - Jun 28 2010

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molecular beam epitaxy
adsorption
overpressure
bismuth
optical absorption
arcs
stabilization
oxygen
curves
thin films
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, J. H., Ke, X., Misra, R., Ihlefeld, J. F., Xu, X. S., Mei, Z. G., ... Schlom, D. G. (2010). Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy. Applied Physics Letters, 96(26), [262905]. https://doi.org/10.1063/1.3457786
Lee, J. H. ; Ke, X. ; Misra, R. ; Ihlefeld, J. F. ; Xu, X. S. ; Mei, Z. G. ; Heeg, T. ; Roeckerath, M. ; Schubert, J. ; Liu, Z. K. ; Musfeldt, J. L. ; Schiffer, P. ; Schlom, D. G. / Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy. In: Applied Physics Letters. 2010 ; Vol. 96, No. 26.
@article{160d2aa0d7f9422d94fb24771519b817,
title = "Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy",
abstract = "We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.",
author = "Lee, {J. H.} and X. Ke and R. Misra and Ihlefeld, {J. F.} and Xu, {X. S.} and Mei, {Z. G.} and T. Heeg and M. Roeckerath and J. Schubert and Liu, {Z. K.} and Musfeldt, {J. L.} and P. Schiffer and Schlom, {D. G.}",
year = "2010",
month = "6",
day = "28",
doi = "10.1063/1.3457786",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

Lee, JH, Ke, X, Misra, R, Ihlefeld, JF, Xu, XS, Mei, ZG, Heeg, T, Roeckerath, M, Schubert, J, Liu, ZK, Musfeldt, JL, Schiffer, P & Schlom, DG 2010, 'Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy', Applied Physics Letters, vol. 96, no. 26, 262905. https://doi.org/10.1063/1.3457786

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy. / Lee, J. H.; Ke, X.; Misra, R.; Ihlefeld, J. F.; Xu, X. S.; Mei, Z. G.; Heeg, T.; Roeckerath, M.; Schubert, J.; Liu, Z. K.; Musfeldt, J. L.; Schiffer, P.; Schlom, D. G.

In: Applied Physics Letters, Vol. 96, No. 26, 262905, 28.06.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

AU - Lee, J. H.

AU - Ke, X.

AU - Misra, R.

AU - Ihlefeld, J. F.

AU - Xu, X. S.

AU - Mei, Z. G.

AU - Heeg, T.

AU - Roeckerath, M.

AU - Schubert, J.

AU - Liu, Z. K.

AU - Musfeldt, J. L.

AU - Schiffer, P.

AU - Schlom, D. G.

PY - 2010/6/28

Y1 - 2010/6/28

N2 - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

AB - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

UR - http://www.scopus.com/inward/record.url?scp=77954347930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954347930&partnerID=8YFLogxK

U2 - 10.1063/1.3457786

DO - 10.1063/1.3457786

M3 - Article

AN - SCOPUS:77954347930

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262905

ER -

Lee JH, Ke X, Misra R, Ihlefeld JF, Xu XS, Mei ZG et al. Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy. Applied Physics Letters. 2010 Jun 28;96(26). 262905. https://doi.org/10.1063/1.3457786