@article{19a43073ada34b71ab76cb13dabf0208,
title = "Adsorption-controlled growth of Ga2O3by suboxide molecular-beam epitaxy",
abstract = "This paper introduces a growth method - suboxide molecular-beam epitaxy (S-MBE) - which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to over 1 μm h-1 in an adsorption-controlled regime, combined with excellent crystallinity. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 μm h-1 and 1.5 μm h-1 for Ga2O3/Al2O3 and Ga2O3/Ga2O3 structures, respectively, with very high crystalline quality at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE, we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4.5 μm. With the high growth rate of S-MBE, we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide range of oxides. With respect to growth rates and crystalline quality, S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. ",
author = "Patrick Vogt and Hensling, {Felix V.E.} and Kathy Azizie and Chang, {Celesta S.} and David Turner and Jisung Park and McCandless, {Jonathan P.} and Hanjong Paik and Bocklund, {Brandon J.} and Georg Hoffman and Oliver Bierwagen and Debdeep Jena and Xing, {Huili G.} and Shin Mou and Muller, {David A.} and Shang, {Shun Li} and Liu, {Zi Kui} and Schlom, {Darrell G.}",
note = "Funding Information: We thank J. D. Blevins for the Ga2O3(010) substrates from SYNOPTICS used in this study and are grateful for stimulating discussions with R. Droopad, J. P. Maria, and M. Passlack. K.A., C.S.C., J.P.M., D.J., H.G.X., D.A.M., and D.G.S. acknowledge support from the AFOSR/AFRL ACCESS Center of Excellence under Award No. FA9550-18-1-0529. J.P.M. also acknowledges support from the National Science Foundation within a Graduate Research Fellowship under Grant No. DGE-1650441. P.V. acknowledges support from ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. F.V.E.H. acknowledges support from the Alexander von Humboldt Foundation in the form of a Feodor Lynen fellowship. F.V.E.H. and H.P. acknowledge support from the National Science Foundation (NSF) [Platform for the Accelerated Realization, Analysis and Discovery of Interface Materials (PARADIM)] under Cooperative Agreement No. DMR-1539918. J.P. acknowledges support from the Air Force Office of Scientific Research under Award No. FA9550-20-1-0102. S.-L.S. and Z.-K.L. acknowledge the support of the NSF through Grant No. CMMI-1825538. This work made use of the Cornell Center for Materials Research (CCMR) Shared Facilities, which are supported through the NSF MRSEC Program (Grant No. DMR-1719875). Substrate preparation was performed, in part, at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the NSF (Grant No. NNCI-2025233). Work by G.H. and O.B. was performed in the framework of GraFOx, a Leibniz-ScienceCampus partially funded by the Leibniz association. G.H. acknowledges financial support by the Leibniz-Gemeinschaft under Grant No. K74/2017. B.J.B. was supported by a NASA Space Technology Research Fellowship (grant number 80NSSC18K1168) and he acknowledges support and training provided by the Computational Materials Education and Training (CoMET) NSF Research Traineeship (grant number DGE-1449785) The authors P.V., D.G.S., F.V.E.H., K.A., Z.-K.L., B.J.B., and S.-L.S., Cornell University (D-9573), and the Pennsylvania State University (2020-5155) have filed a U.S. patent on October 21, 2020, Serial No. 17/076, 011, with the title “Suboxide Molecular-Beam Epitaxy and Related Structures.” Publisher Copyright: {\textcopyright} 2021 Author(s).",
year = "2021",
month = mar,
day = "1",
doi = "10.1063/5.0035469",
language = "English (US)",
volume = "9",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}