@article{6e71221f2cb64c10b6eb76b978d81027,
title = "Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy",
abstract = "Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.",
author = "Hanjong Paik and Zhen Chen and Edward Lochocki and {Ariel Seidner}, H. and Amit Verma and Nicholas Tanen and Jisung Park and Masaki Uchida and Shunli Shang and Zhou, {Bi Cheng} and Mario Br{\"u}tzam and Reinhard Uecker and Liu, {Zi Kui} and Debdeep Jena and Shen, {Kyle M.} and Muller, {David A.} and Schlom, {Darrell G.}",
note = "Funding Information: We gratefully acknowledge stimulating discussions with Karthik Krishnaswamy and Chris Van de Walle. This material is based upon work supported by the Air Force Office of Scientific Research under Award No. FA9550-16-1-0192 and by the National Science Foundation [Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)] under Cooperative Agreement No. DMR-1539918. We also acknowledge support from the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA. This work made use of the Cornell Center for Materials Research (CCMR) Shared Facilities, which are supported through the NSF MRSEC program (No. DMR-1719875). Substrate preparation was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the NSF (Grant No. ECCS-15420819). Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = nov,
day = "1",
doi = "10.1063/1.5001839",
language = "English (US)",
volume = "5",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}