Abstract
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.
| Original language | English (US) |
|---|---|
| Article number | 116107 |
| Journal | APL Materials |
| Volume | 5 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 1 2017 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
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Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. / Paik, Hanjong; Chen, Zhen; Lochocki, Edward; Ariel Seidner, H.; Verma, Amit; Tanen, Nicholas; Park, Jisung; Uchida, Masaki; Shang, Shunli; Zhou, Bi Cheng; Brützam, Mario; Uecker, Reinhard; Liu, Zi Kui; Jena, Debdeep; Shen, Kyle M.; Muller, David A.; Schlom, Darrell G.
In: APL Materials, Vol. 5, No. 11, 116107, 01.11.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
AU - Paik, Hanjong
AU - Chen, Zhen
AU - Lochocki, Edward
AU - Ariel Seidner, H.
AU - Verma, Amit
AU - Tanen, Nicholas
AU - Park, Jisung
AU - Uchida, Masaki
AU - Shang, Shunli
AU - Zhou, Bi Cheng
AU - Brützam, Mario
AU - Uecker, Reinhard
AU - Liu, Zi Kui
AU - Jena, Debdeep
AU - Shen, Kyle M.
AU - Muller, David A.
AU - Schlom, Darrell G.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.
AB - Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.
UR - http://www.scopus.com/inward/record.url?scp=85036471994&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85036471994&partnerID=8YFLogxK
U2 - 10.1063/1.5001839
DO - 10.1063/1.5001839
M3 - Article
AN - SCOPUS:85036471994
VL - 5
JO - APL Materials
JF - APL Materials
SN - 2166-532X
IS - 11
M1 - 116107
ER -