Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

J. F. Ihlefeld, A. Kumar, V. Gopalan, D. G. Schlom, Y. B. Chen, X. Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L. W. Martin, Y. H. Chu, R. Ramesh

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Abstract

BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

Original languageEnglish (US)
Article number071922
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
StatePublished - Aug 24 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Ihlefeld, J. F., Kumar, A., Gopalan, V., Schlom, D. G., Chen, Y. B., Pan, X. Q., Heeg, T., Schubert, J., Ke, X., Schiffer, P., Orenstein, J., Martin, L. W., Chu, Y. H., & Ramesh, R. (2007). Adsorption-controlled molecular-beam epitaxial growth of BiFe O3. Applied Physics Letters, 91(7), [071922]. https://doi.org/10.1063/1.2767771