Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, Thomas Nelson Jackson, Suzanne E. Mohney, J. B. Boos, B. R. Bennett, I. Geppert, M. Eizenberg, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

Fingerprint

Semiconductor quantum wells
Anions
Transistors
transistors
Negative ions
quantum wells
anions
composite materials
Composite materials
Field effect transistors
leakage
field effect transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ali, A., Madan, H., Misra, R., Hwang, E., Agrawal, A., Ramirez, I., ... Datta, S. (2010). Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703308] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703308
Ali, A. ; Madan, H. ; Misra, R. ; Hwang, E. ; Agrawal, A. ; Ramirez, I. ; Schiffer, P. ; Jackson, Thomas Nelson ; Mohney, Suzanne E. ; Boos, J. B. ; Bennett, B. R. ; Geppert, I. ; Eizenberg, M. ; Datta, S. / Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.",
author = "A. Ali and H. Madan and R. Misra and E. Hwang and A. Agrawal and I. Ramirez and P. Schiffer and Jackson, {Thomas Nelson} and Mohney, {Suzanne E.} and Boos, {J. B.} and Bennett, {B. R.} and I. Geppert and M. Eizenberg and S. Datta",
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Ali, A, Madan, H, Misra, R, Hwang, E, Agrawal, A, Ramirez, I, Schiffer, P, Jackson, TN, Mohney, SE, Boos, JB, Bennett, BR, Geppert, I, Eizenberg, M & Datta, S 2010, Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703308, Technical Digest - International Electron Devices Meeting, IEDM, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703308

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. / Ali, A.; Madan, H.; Misra, R.; Hwang, E.; Agrawal, A.; Ramirez, I.; Schiffer, P.; Jackson, Thomas Nelson; Mohney, Suzanne E.; Boos, J. B.; Bennett, B. R.; Geppert, I.; Eizenberg, M.; Datta, S.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703308 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Ali, A.

AU - Madan, H.

AU - Misra, R.

AU - Hwang, E.

AU - Agrawal, A.

AU - Ramirez, I.

AU - Schiffer, P.

AU - Jackson, Thomas Nelson

AU - Mohney, Suzanne E.

AU - Boos, J. B.

AU - Bennett, B. R.

AU - Geppert, I.

AU - Eizenberg, M.

AU - Datta, S.

PY - 2010/12/1

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N2 - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

AB - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

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SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

ER -

Ali A, Madan H, Misra R, Hwang E, Agrawal A, Ramirez I et al. Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703308. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703308