Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, T. N. Jackson, S. E. Mohney, J. B. Boos, B. R. Bennett, I. Geppert, M. Eizenberg, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages6.3.1-6.3.4
DOIs
StatePublished - 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors'. Together they form a unique fingerprint.

Cite this