Advances in piezoelectrically actuated RF MEMS switches and phase shifters

Ronald G. Polcawich, Daniel Judy, Jeffrey S. Pulskamp, Susan Trolier-McKinstry, Madan Dubey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

41 Scopus citations

Abstract

This report presents results on recent advances in piezoelectric actuated radio frequency (RT) microelectromechanical system (MEMS) devices including a temperature insensitive RF MEMS series switch and the demonstration of a 2-bit MEMS phase shifter incorporating PZT switches. Using lead zirconate titanate (PZT) thin films, modifications to our earlier designs resulted in a RF MEMS series switch operating at 10 V from -25°C to 100°C with better than 30 dB isolation and insertion loss less than 0.5 dB from DC to 50 GHz. In addition, a 17 GHz, 2-bit reflection phase shifter has been demonstrated with an average insertion loss of 2.96 dB using PZT shunt switches operating at 15 V.

Original languageEnglish (US)
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages2083-2086
Number of pages4
DOIs
StatePublished - Oct 2 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: Jun 3 2007Jun 8 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period6/3/076/8/07

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All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Polcawich, R. G., Judy, D., Pulskamp, J. S., Trolier-McKinstry, S., & Dubey, M. (2007). Advances in piezoelectrically actuated RF MEMS switches and phase shifters. In 2007 IEEE MTT-S International Microwave Symposium Digest (pp. 2083-2086). [4264279] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2007.380297