Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

N. Shukla, B. Grisafe, R. K. Ghosh, N. Jao, A. Aziz, J. Frougier, M. Jerry, S. Sonde, S. Rouvimov, T. Orlova, S. Gupta, S. Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    18 Scopus citations

    Abstract

    We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

    Original languageEnglish (US)
    Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages34.6.1-34.6.4
    ISBN (Electronic)9781509039012
    DOIs
    StatePublished - Jan 31 2017
    Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
    Duration: Dec 3 2016Dec 7 2016

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other62nd IEEE International Electron Devices Meeting, IEDM 2016
    CountryUnited States
    CitySan Francisco
    Period12/3/1612/7/16

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Ag/HfO<sub>2</sub> based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs'. Together they form a unique fingerprint.

    Cite this