Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

N. Shukla, B. Grisafe, R. K. Ghosh, N. Jao, A. Aziz, J. Frougier, M. Jerry, S. Sonde, S. Rouvimov, T. Orlova, S. Gupta, S. Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    16 Citations (Scopus)

    Abstract

    We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

    Original languageEnglish (US)
    Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages34.6.1-34.6.4
    ISBN (Electronic)9781509039012
    DOIs
    StatePublished - Jan 31 2017
    Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
    Duration: Dec 3 2016Dec 7 2016

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other62nd IEEE International Electron Devices Meeting, IEDM 2016
    CountryUnited States
    CitySan Francisco
    Period12/3/1612/7/16

    Fingerprint

    Field effect transistors
    field effect transistors
    switches
    nonlinearity
    Switches
    slopes
    Data storage equipment
    thresholds
    margins
    leakage
    Ions
    Phase change memory
    harnesses
    selectors
    Leakage currents
    ion currents
    emerging
    filaments
    interstitials
    Transistors

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Shukla, N., Grisafe, B., Ghosh, R. K., Jao, N., Aziz, A., Frougier, J., ... Datta, S. (2017). Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 34.6.1-34.6.4). [7838542] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838542
    Shukla, N. ; Grisafe, B. ; Ghosh, R. K. ; Jao, N. ; Aziz, A. ; Frougier, J. ; Jerry, M. ; Sonde, S. ; Rouvimov, S. ; Orlova, T. ; Gupta, S. ; Datta, S. / Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 34.6.1-34.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).
    @inproceedings{db28ecd9a32041bc919e4cb7f06fb9da,
    title = "Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs",
    abstract = "We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28{\%} and write margin of 32{\%} for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.",
    author = "N. Shukla and B. Grisafe and Ghosh, {R. K.} and N. Jao and A. Aziz and J. Frougier and M. Jerry and S. Sonde and S. Rouvimov and T. Orlova and S. Gupta and S. Datta",
    year = "2017",
    month = "1",
    day = "31",
    doi = "10.1109/IEDM.2016.7838542",
    language = "English (US)",
    series = "Technical Digest - International Electron Devices Meeting, IEDM",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    pages = "34.6.1--34.6.4",
    booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
    address = "United States",

    }

    Shukla, N, Grisafe, B, Ghosh, RK, Jao, N, Aziz, A, Frougier, J, Jerry, M, Sonde, S, Rouvimov, S, Orlova, T, Gupta, S & Datta, S 2017, Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838542, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 34.6.1-34.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838542

    Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. / Shukla, N.; Grisafe, B.; Ghosh, R. K.; Jao, N.; Aziz, A.; Frougier, J.; Jerry, M.; Sonde, S.; Rouvimov, S.; Orlova, T.; Gupta, S.; Datta, S.

    2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 34.6.1-34.6.4 7838542 (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

    AU - Shukla, N.

    AU - Grisafe, B.

    AU - Ghosh, R. K.

    AU - Jao, N.

    AU - Aziz, A.

    AU - Frougier, J.

    AU - Jerry, M.

    AU - Sonde, S.

    AU - Rouvimov, S.

    AU - Orlova, T.

    AU - Gupta, S.

    AU - Datta, S.

    PY - 2017/1/31

    Y1 - 2017/1/31

    N2 - We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

    AB - We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

    UR - http://www.scopus.com/inward/record.url?scp=85014464937&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85014464937&partnerID=8YFLogxK

    U2 - 10.1109/IEDM.2016.7838542

    DO - 10.1109/IEDM.2016.7838542

    M3 - Conference contribution

    AN - SCOPUS:85014464937

    T3 - Technical Digest - International Electron Devices Meeting, IEDM

    SP - 34.6.1-34.6.4

    BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -

    Shukla N, Grisafe B, Ghosh RK, Jao N, Aziz A, Frougier J et al. Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 34.6.1-34.6.4. 7838542. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2016.7838542