AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari, Joan Marie Redwing, G. Keiner, W. Kruppa

Research output: Contribution to journalArticle

157 Citations (Scopus)

Abstract

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

Original languageEnglish (US)
Pages (from-to)242-243
Number of pages2
JournalElectronics Letters
Volume33
Issue number3
DOIs
StatePublished - Jan 30 1997

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High electron mobility transistors
Transconductance
Substrates
Electric breakdown
Fabrication

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Binari, S. C. ; Redwing, Joan Marie ; Keiner, G. ; Kruppa, W. / AIGaN/GaN HEMTs grown on SiC substrates. In: Electronics Letters. 1997 ; Vol. 33, No. 3. pp. 242-243.
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Binari, SC, Redwing, JM, Keiner, G & Kruppa, W 1997, 'AIGaN/GaN HEMTs grown on SiC substrates', Electronics Letters, vol. 33, no. 3, pp. 242-243. https://doi.org/10.1049/el:19970122

AIGaN/GaN HEMTs grown on SiC substrates. / Binari, S. C.; Redwing, Joan Marie; Keiner, G.; Kruppa, W.

In: Electronics Letters, Vol. 33, No. 3, 30.01.1997, p. 242-243.

Research output: Contribution to journalArticle

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