The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering