AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari, J. M. Redwing, G. Keiner, W. Kruppa

Research output: Contribution to journalArticle

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Abstract

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

Original languageEnglish (US)
Pages (from-to)242-243
Number of pages2
JournalElectronics Letters
Volume33
Issue number3
DOIs
StatePublished - Jan 30 1997

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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