Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. Lebeau, Roman Engel-Herbert, Susanne Stemmer

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.

Original languageEnglish (US)
Article number142901
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
StatePublished - Apr 4 2011

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metal oxide semiconductors
capacitors
hafnium
hafnium oxides
traps
aluminum
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hwang, Y., Chobpattana, V., Zhang, J. Y., Lebeau, J. M., Engel-Herbert, R., & Stemmer, S. (2011). Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors. Applied Physics Letters, 98(14), [142901]. https://doi.org/10.1063/1.3575569
Hwang, Yoontae ; Chobpattana, Varistha ; Zhang, Jack Y. ; Lebeau, James M. ; Engel-Herbert, Roman ; Stemmer, Susanne. / Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors. In: Applied Physics Letters. 2011 ; Vol. 98, No. 14.
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Hwang, Y, Chobpattana, V, Zhang, JY, Lebeau, JM, Engel-Herbert, R & Stemmer, S 2011, 'Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors', Applied Physics Letters, vol. 98, no. 14, 142901. https://doi.org/10.1063/1.3575569

Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors. / Hwang, Yoontae; Chobpattana, Varistha; Zhang, Jack Y.; Lebeau, James M.; Engel-Herbert, Roman; Stemmer, Susanne.

In: Applied Physics Letters, Vol. 98, No. 14, 142901, 04.04.2011.

Research output: Contribution to journalArticle

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