Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. Lebeau, Roman Engel-Herbert, Susanne Stemmer

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.

Original languageEnglish (US)
Article number142901
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
StatePublished - Apr 4 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Al-doped HfO<sub>2</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub> As metal-oxide-semiconductor capacitors'. Together they form a unique fingerprint.

  • Cite this

    Hwang, Y., Chobpattana, V., Zhang, J. Y., Lebeau, J. M., Engel-Herbert, R., & Stemmer, S. (2011). Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors. Applied Physics Letters, 98(14), [142901]. https://doi.org/10.1063/1.3575569