Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

R. Li, J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing

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Abstract

An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-Ω-mm was achieved through the use of high Al content and high n-type doping (1E19 cm-3) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

Original languageEnglish (US)
Pages (from-to)323-325
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number7
DOIs
StatePublished - Jul 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Li, R., Cai, J., Wong, L., Chen, Y., Wang, K. L., Smith, R. P., Martin, S. C., Boutros, K. S., & Redwing, J. M. (1999). Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz. IEEE Electron Device Letters, 20(7), 323-325. https://doi.org/10.1109/55.772364