Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

R. Li, J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, Joan Marie Redwing

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-Ω-mm was achieved through the use of high Al content and high n-type doping (1E19 cm-3) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

Original languageEnglish (US)
Pages (from-to)323-325
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number7
DOIs
StatePublished - Jul 1 1999

Fingerprint

Ohmic contacts
Transconductance
High electron mobility transistors
Contact resistance
Metallizing
Remote sensing
Radar
Current density
Microwaves
Doping (additives)
Communication
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Li, R. ; Cai, J. ; Wong, L. ; Chen, Y. ; Wang, K. L. ; Smith, R. P. ; Martin, S. C. ; Boutros, K. S. ; Redwing, Joan Marie. / Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz. In: IEEE Electron Device Letters. 1999 ; Vol. 20, No. 7. pp. 323-325.
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abstract = "An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-Ω-mm was achieved through the use of high Al content and high n-type doping (1E19 cm-3) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.",
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Li, R, Cai, J, Wong, L, Chen, Y, Wang, KL, Smith, RP, Martin, SC, Boutros, KS & Redwing, JM 1999, 'Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz', IEEE Electron Device Letters, vol. 20, no. 7, pp. 323-325. https://doi.org/10.1109/55.772364

Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz. / Li, R.; Cai, J.; Wong, L.; Chen, Y.; Wang, K. L.; Smith, R. P.; Martin, S. C.; Boutros, K. S.; Redwing, Joan Marie.

In: IEEE Electron Device Letters, Vol. 20, No. 7, 01.07.1999, p. 323-325.

Research output: Contribution to journalArticle

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T1 - Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

AU - Li, R.

AU - Cai, J.

AU - Wong, L.

AU - Chen, Y.

AU - Wang, K. L.

AU - Smith, R. P.

AU - Martin, S. C.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

PY - 1999/7/1

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N2 - An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-Ω-mm was achieved through the use of high Al content and high n-type doping (1E19 cm-3) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

AB - An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-μm gate length is reported. A source-drain ohmic contact resistance of 0.15-Ω-mm was achieved through the use of high Al content and high n-type doping (1E19 cm-3) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

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