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Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz
R. Li, J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing
Research output: Contribution to journal › Article › peer-review
68
Scopus
citations