AlGaN microwave power HFETs on insulating SiC substrates

Gerry Sullivan, Ed Gertner, Richard Pittman, Mary Chen, Richard Pierson, Aiden Higgins, Qisheng Chen, Jin Wu Yang, R. Peter Smith, Raul Perez, Abdur Khan, Joan Marie Redwing, Brian McDermott, Karim Boutros

Research output: Contribution to journalConference article

Abstract

AlGaN HFETs are attractive devices for high power microwave applications. Sapphire, which is the typical substrate for AlGaN epitaxy, has a very poor thermal conductivity, and the power performance of AlGaN HFETs fabricated on sapphire substrates is severely limited due to this large thermal impedance. We report on HFETs fabricated on high thermal conductivity electrically insulating SiC substrates. Excellent RF power performance for large area devices is demonstrated. On-wafer CW measurements at 10 GHz of a 320 micron wide FET resulted in an RF power density of 2.8 Watts/mm, and measurements of a 1280 micron wide FET resulted in a total power of 2.3 Watts. On-wafer pulsed measurements, at 8 GHz, of a 1280 micron wide FET resulted in a total power of 3.9 Watts. Design of a hybrid microwave amplifier will be discussed.

Original languageEnglish (US)
Pages (from-to)471-479
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume572
StatePublished - Dec 1 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

Fingerprint

Field effect transistors
field effect transistors
Aluminum Oxide
Microwaves
microwaves
Sapphire
Thermal conductivity
sapphire
Substrates
thermal conductivity
wafers
microwave amplifiers
Microwave amplifiers
Epitaxial growth
epitaxy
radiant flux density
impedance
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., ... Boutros, K. (1999). AlGaN microwave power HFETs on insulating SiC substrates. Materials Research Society Symposium - Proceedings, 572, 471-479.
Sullivan, Gerry ; Gertner, Ed ; Pittman, Richard ; Chen, Mary ; Pierson, Richard ; Higgins, Aiden ; Chen, Qisheng ; Yang, Jin Wu ; Peter Smith, R. ; Perez, Raul ; Khan, Abdur ; Redwing, Joan Marie ; McDermott, Brian ; Boutros, Karim. / AlGaN microwave power HFETs on insulating SiC substrates. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 572. pp. 471-479.
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Sullivan, G, Gertner, E, Pittman, R, Chen, M, Pierson, R, Higgins, A, Chen, Q, Yang, JW, Peter Smith, R, Perez, R, Khan, A, Redwing, JM, McDermott, B & Boutros, K 1999, 'AlGaN microwave power HFETs on insulating SiC substrates', Materials Research Society Symposium - Proceedings, vol. 572, pp. 471-479.

AlGaN microwave power HFETs on insulating SiC substrates. / Sullivan, Gerry; Gertner, Ed; Pittman, Richard; Chen, Mary; Pierson, Richard; Higgins, Aiden; Chen, Qisheng; Yang, Jin Wu; Peter Smith, R.; Perez, Raul; Khan, Abdur; Redwing, Joan Marie; McDermott, Brian; Boutros, Karim.

In: Materials Research Society Symposium - Proceedings, Vol. 572, 01.12.1999, p. 471-479.

Research output: Contribution to journalConference article

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T1 - AlGaN microwave power HFETs on insulating SiC substrates

AU - Sullivan, Gerry

AU - Gertner, Ed

AU - Pittman, Richard

AU - Chen, Mary

AU - Pierson, Richard

AU - Higgins, Aiden

AU - Chen, Qisheng

AU - Yang, Jin Wu

AU - Peter Smith, R.

AU - Perez, Raul

AU - Khan, Abdur

AU - Redwing, Joan Marie

AU - McDermott, Brian

AU - Boutros, Karim

PY - 1999/12/1

Y1 - 1999/12/1

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AB - AlGaN HFETs are attractive devices for high power microwave applications. Sapphire, which is the typical substrate for AlGaN epitaxy, has a very poor thermal conductivity, and the power performance of AlGaN HFETs fabricated on sapphire substrates is severely limited due to this large thermal impedance. We report on HFETs fabricated on high thermal conductivity electrically insulating SiC substrates. Excellent RF power performance for large area devices is demonstrated. On-wafer CW measurements at 10 GHz of a 320 micron wide FET resulted in an RF power density of 2.8 Watts/mm, and measurements of a 1280 micron wide FET resulted in a total power of 2.3 Watts. On-wafer pulsed measurements, at 8 GHz, of a 1280 micron wide FET resulted in a total power of 3.9 Watts. Design of a hybrid microwave amplifier will be discussed.

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Sullivan G, Gertner E, Pittman R, Chen M, Pierson R, Higgins A et al. AlGaN microwave power HFETs on insulating SiC substrates. Materials Research Society Symposium - Proceedings. 1999 Dec 1;572:471-479.