AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei, C. Suh, Rongming Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, U. K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Pages129-130
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Publication series

Name65th DRC Device Research Conference

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Pei, Y., Suh, C., Chu, R., Recht, F., Shen, L., Corrion, A., Poblenz, C., Speck, J., & Mishra, U. K. (2007). AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. In 65th DRC Device Research Conference (pp. 129-130). [4373683] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373683