| Original language | English (US) |
|---|---|
| Title of host publication | 65th DRC Device Research Conference |
| Pages | 129-130 |
| Number of pages | 2 |
| DOIs | |
| State | Published - Dec 1 2007 |
| Event | 65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007 |
Publication series
| Name | 65th DRC Device Research Conference |
|---|
Other
| Other | 65th DRC Device Research Conference |
|---|---|
| Country | India |
| City | South Bend |
| Period | 6/18/07 → 6/20/07 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
}
AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. / Pei, Y.; Suh, C.; Chu, Rongming; Recht, F.; Shen, L.; Corrion, A.; Poblenz, C.; Speck, J.; Mishra, U. K.
65th DRC Device Research Conference. 2007. p. 129-130 4373683 (65th DRC Device Research Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE
AU - Pei, Y.
AU - Suh, C.
AU - Chu, Rongming
AU - Recht, F.
AU - Shen, L.
AU - Corrion, A.
AU - Poblenz, C.
AU - Speck, J.
AU - Mishra, U. K.
PY - 2007/12/1
Y1 - 2007/12/1
UR - http://www.scopus.com/inward/record.url?scp=47249127329&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=47249127329&partnerID=8YFLogxK
U2 - 10.1109/DRC.2007.4373683
DO - 10.1109/DRC.2007.4373683
M3 - Conference contribution
AN - SCOPUS:47249127329
SN - 1424411025
SN - 9781424411023
T3 - 65th DRC Device Research Conference
SP - 129
EP - 130
BT - 65th DRC Device Research Conference
ER -