AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei; C. Suh; Rongming Chu; F. Recht; L. Shen; A. Corrion; C. Poblenz; J. Speck; U. K. Mishra

doi:10.1109/DRC.2007.4373683

AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei, C. Suh, Rongming Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, U. K. Mishra

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	65th DRC Device Research Conference
Pages	129-130
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373683
State	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373683

Cite this

Pei, Y., Suh, C., Chu, R., Recht, F., Shen, L., Corrion, A., Poblenz, C., Speck, J., & Mishra, U. K. (2007). AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. In 65th DRC Device Research Conference (pp. 129-130). [4373683] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373683

@inproceedings{64a5bc1901284434b09e33a1059125e6,

title = "AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE",

author = "Y. Pei and C. Suh and Rongming Chu and F. Recht and L. Shen and A. Corrion and C. Poblenz and J. Speck and Mishra, {U. K.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/DRC.2007.4373683",

language = "English (US)",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "129--130",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

Pei, Y, Suh, C, Chu, R, Recht, F, Shen, L, Corrion, A, Poblenz, C, Speck, J & Mishra, UK 2007, AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. in 65th DRC Device Research Conference., 4373683, 65th DRC Device Research Conference, pp. 129-130, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373683

TY - GEN

T1 - AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

AU - Pei, Y.

AU - Suh, C.

AU - Chu, Rongming

AU - Recht, F.

AU - Shen, L.

AU - Corrion, A.

AU - Poblenz, C.

AU - Speck, J.

AU - Mishra, U. K.

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=47249127329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249127329&partnerID=8YFLogxK

U2 - 10.1109/DRC.2007.4373683

DO - 10.1109/DRC.2007.4373683

M3 - Conference contribution

AN - SCOPUS:47249127329

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 129

EP - 130

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -