AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei, C. Suh, Rongming Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, U. K. Mishra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Pages129-130
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name65th DRC Device Research Conference

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/07 → 6/20/07

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High electron mobility transistors
Electric breakdown
Molecular beam epitaxy
Ammonia

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Pei, Y., Suh, C., Chu, R., Recht, F., Shen, L., Corrion, A., ... Mishra, U. K. (2007). AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. In 65th DRC Device Research Conference (pp. 129-130). [4373683] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373683
Pei, Y. ; Suh, C. ; Chu, Rongming ; Recht, F. ; Shen, L. ; Corrion, A. ; Poblenz, C. ; Speck, J. ; Mishra, U. K. / AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. 65th DRC Device Research Conference. 2007. pp. 129-130 (65th DRC Device Research Conference).
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month = "12",
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Pei, Y, Suh, C, Chu, R, Recht, F, Shen, L, Corrion, A, Poblenz, C, Speck, J & Mishra, UK 2007, AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. in 65th DRC Device Research Conference., 4373683, 65th DRC Device Research Conference, pp. 129-130, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373683

AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. / Pei, Y.; Suh, C.; Chu, Rongming; Recht, F.; Shen, L.; Corrion, A.; Poblenz, C.; Speck, J.; Mishra, U. K.

65th DRC Device Research Conference. 2007. p. 129-130 4373683 (65th DRC Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

AU - Pei, Y.

AU - Suh, C.

AU - Chu, Rongming

AU - Recht, F.

AU - Shen, L.

AU - Corrion, A.

AU - Poblenz, C.

AU - Speck, J.

AU - Mishra, U. K.

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DO - 10.1109/DRC.2007.4373683

M3 - Conference contribution

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

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BT - 65th DRC Device Research Conference

ER -

Pei Y, Suh C, Chu R, Recht F, Shen L, Corrion A et al. AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. In 65th DRC Device Research Conference. 2007. p. 129-130. 4373683. (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373683

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