AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties

E. L. Piner, D. M. Keogh, J. S. Flynn, J. M. Redwing

Research output: Contribution to journalArticle

Abstract

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
DOIs
StatePublished - 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint Dive into the research topics of 'AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties'. Together they form a unique fingerprint.

  • Cite this