AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties

E. L. Piner, D. M. Keogh, J. S. Flynn, Joan Marie Redwing

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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