AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties

E. L. Piner, D. M. Keogh, J. S. Flynn, J. M. Redwing

Research output: Contribution to journalArticle

Abstract

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

Original languageEnglish (US)
Pages (from-to)W441-W445
JournalMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - Dec 1 2000

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High electron mobility transistors
high electron mobility transistors
Electric properties
electrical properties
Doping (additives)
Heterojunctions
wurtzite
spacers
contraction
electron gas
Two dimensional electron gas
modulation
polarization
cells
Modulation
aluminum gallium nitride
Polarization
ions
Ions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties",
abstract = "We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.",
author = "Piner, {E. L.} and Keogh, {D. M.} and Flynn, {J. S.} and Redwing, {J. M.}",
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AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties. / Piner, E. L.; Keogh, D. M.; Flynn, J. S.; Redwing, J. M.

In: Materials Research Society Symposium - Proceedings, Vol. 595, 01.12.2000, p. W441-W445.

Research output: Contribution to journalArticle

TY - JOUR

T1 - AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties

AU - Piner, E. L.

AU - Keogh, D. M.

AU - Flynn, J. S.

AU - Redwing, J. M.

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AB - We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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