AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz

A. Vescan, R. Dietrich, A. Wieszt, A. Schurr, H. Leier, E. L. Piner, Joan Marie Redwing

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The power performance of AlGaN/GaN MODFETs grown on semi-insulating SiC is reported. The epitaxial layers were grown by MOCVD with a good uniformity and excellent carrier mobility of 1300 cm2/Vs at room temperature. Devices with gate length of 0.3 μm were fabricated and characterized, yielding a record transconductance of 300 mS/mm. Active load-pull measurements yielded 594 mW total output power at 20 GHz. At 15 GHz a total output power of 3.3 W was measured. To the authors' knowledge, these results represent the highest output power so far achieved from a single GaN-device at Ku and K-band.

Original languageEnglish (US)
Pages (from-to)1234-1236
Number of pages3
JournalElectronics Letters
Volume36
Issue number14
DOIs
StatePublished - Jul 6 2000

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Carrier mobility
Epitaxial layers
Metallorganic chemical vapor deposition
Transconductance
High electron mobility transistors
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Vescan, A., Dietrich, R., Wieszt, A., Schurr, A., Leier, H., Piner, E. L., & Redwing, J. M. (2000). AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz. Electronics Letters, 36(14), 1234-1236. https://doi.org/10.1049/el:20000898
Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Schurr, A. ; Leier, H. ; Piner, E. L. ; Redwing, Joan Marie. / AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz. In: Electronics Letters. 2000 ; Vol. 36, No. 14. pp. 1234-1236.
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Vescan, A, Dietrich, R, Wieszt, A, Schurr, A, Leier, H, Piner, EL & Redwing, JM 2000, 'AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz', Electronics Letters, vol. 36, no. 14, pp. 1234-1236. https://doi.org/10.1049/el:20000898

AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz. / Vescan, A.; Dietrich, R.; Wieszt, A.; Schurr, A.; Leier, H.; Piner, E. L.; Redwing, Joan Marie.

In: Electronics Letters, Vol. 36, No. 14, 06.07.2000, p. 1234-1236.

Research output: Contribution to journalArticle

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AU - Vescan, A.

AU - Dietrich, R.

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AU - Leier, H.

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AU - Redwing, Joan Marie

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Vescan A, Dietrich R, Wieszt A, Schurr A, Leier H, Piner EL et al. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz. Electronics Letters. 2000 Jul 6;36(14):1234-1236. https://doi.org/10.1049/el:20000898