AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz

A. Vescan, R. Dietrich, A. Wieszt, A. Schurr, H. Leier, E. L. Piner, Joan Marie Redwing

Research output: Contribution to journalArticle

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Abstract

The power performance of AlGaN/GaN MODFETs grown on semi-insulating SiC is reported. The epitaxial layers were grown by MOCVD with a good uniformity and excellent carrier mobility of 1300 cm2/Vs at room temperature. Devices with gate length of 0.3 μm were fabricated and characterized, yielding a record transconductance of 300 mS/mm. Active load-pull measurements yielded 594 mW total output power at 20 GHz. At 15 GHz a total output power of 3.3 W was measured. To the authors' knowledge, these results represent the highest output power so far achieved from a single GaN-device at Ku and K-band.

Original languageEnglish (US)
Pages (from-to)1234-1236
Number of pages3
JournalElectronics Letters
Volume36
Issue number14
DOIs
StatePublished - Jul 6 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Vescan, A., Dietrich, R., Wieszt, A., Schurr, A., Leier, H., Piner, E. L., & Redwing, J. M. (2000). AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz. Electronics Letters, 36(14), 1234-1236. https://doi.org/10.1049/el:20000898