All-dry resist processes for 193-nm lithography

Mark W. Horn, B. E. Maxwell, Roderick R. Kunz, Michael S. Hibbs, Lynn M. Eriksen, Susan C. Palmateer, A. R. Forte

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all- dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225- μm and 0.200-μm line and space features were obtained at a dose of approximately 58 mJ/cm2. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-μm features patterned in plasma deposited silylation resist.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages760-761
Number of pages2
ISBN (Print)0819417866
StatePublished - Jan 1 1995
EventAdvances in Resist Technology and Processing XII - Santa Clara, CA, USA
Duration: Feb 20 1995Feb 22 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2438
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Technology and Processing XII
CitySanta Clara, CA, USA
Period2/20/952/22/95

Fingerprint

Lithography
Resist
Plasma enhanced chemical vapor deposition
Polymers
lithography
Plasma
Chemical Vapor Deposition
Photoresists
Helicons
Photoresist
photoresists
vapor deposition
polymers
Silicon
Carbon
Chemistry
Figure
Plasmas
Scanning electron microscopy
chemistry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Horn, M. W., Maxwell, B. E., Kunz, R. R., Hibbs, M. S., Eriksen, L. M., Palmateer, S. C., & Forte, A. R. (1995). All-dry resist processes for 193-nm lithography. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 760-761). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2438). Society of Photo-Optical Instrumentation Engineers.
Horn, Mark W. ; Maxwell, B. E. ; Kunz, Roderick R. ; Hibbs, Michael S. ; Eriksen, Lynn M. ; Palmateer, Susan C. ; Forte, A. R. / All-dry resist processes for 193-nm lithography. Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, 1995. pp. 760-761 (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{61dbd6edbd7041bc8c6d925a4bab9d27,
title = "All-dry resist processes for 193-nm lithography",
abstract = "We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all- dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225- μm and 0.200-μm line and space features were obtained at a dose of approximately 58 mJ/cm2. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-μm features patterned in plasma deposited silylation resist.",
author = "Horn, {Mark W.} and Maxwell, {B. E.} and Kunz, {Roderick R.} and Hibbs, {Michael S.} and Eriksen, {Lynn M.} and Palmateer, {Susan C.} and Forte, {A. R.}",
year = "1995",
month = "1",
day = "1",
language = "English (US)",
isbn = "0819417866",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "760--761",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Horn, MW, Maxwell, BE, Kunz, RR, Hibbs, MS, Eriksen, LM, Palmateer, SC & Forte, AR 1995, All-dry resist processes for 193-nm lithography. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2438, Society of Photo-Optical Instrumentation Engineers, pp. 760-761, Advances in Resist Technology and Processing XII, Santa Clara, CA, USA, 2/20/95.

All-dry resist processes for 193-nm lithography. / Horn, Mark W.; Maxwell, B. E.; Kunz, Roderick R.; Hibbs, Michael S.; Eriksen, Lynn M.; Palmateer, Susan C.; Forte, A. R.

Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, 1995. p. 760-761 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2438).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - All-dry resist processes for 193-nm lithography

AU - Horn, Mark W.

AU - Maxwell, B. E.

AU - Kunz, Roderick R.

AU - Hibbs, Michael S.

AU - Eriksen, Lynn M.

AU - Palmateer, Susan C.

AU - Forte, A. R.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all- dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225- μm and 0.200-μm line and space features were obtained at a dose of approximately 58 mJ/cm2. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-μm features patterned in plasma deposited silylation resist.

AB - We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all- dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225- μm and 0.200-μm line and space features were obtained at a dose of approximately 58 mJ/cm2. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-μm features patterned in plasma deposited silylation resist.

UR - http://www.scopus.com/inward/record.url?scp=0029214514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029214514&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029214514

SN - 0819417866

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 760

EP - 761

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -

Horn MW, Maxwell BE, Kunz RR, Hibbs MS, Eriksen LM, Palmateer SC et al. All-dry resist processes for 193-nm lithography. In Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers. 1995. p. 760-761. (Proceedings of SPIE - The International Society for Optical Engineering).