All-optical control devices utilizing bulk photovoltaic effect

Michio Tanimura, Kenji Uchino, Kazuyasu Hikita

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.

Original languageEnglish (US)
Pages (from-to)170-172
Number of pages3
JournalJapanese Journal of Applied Physics
Volume28
Issue numberS2
DOIs
StatePublished - Jan 1 1989

Fingerprint

near ultraviolet radiation
Photovoltaic effects
optical control
photovoltaic effect
deflectors
control equipment
electro-optics
modulators
high voltages
chips
Doping (additives)
ceramics
impurities
Electrooptical effects
Ultraviolet radiation
Perovskite
Modulators
Ferroelectric materials
Impurities
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tanimura, Michio ; Uchino, Kenji ; Hikita, Kazuyasu. / All-optical control devices utilizing bulk photovoltaic effect. In: Japanese Journal of Applied Physics. 1989 ; Vol. 28, No. S2. pp. 170-172.
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All-optical control devices utilizing bulk photovoltaic effect. / Tanimura, Michio; Uchino, Kenji; Hikita, Kazuyasu.

In: Japanese Journal of Applied Physics, Vol. 28, No. S2, 01.01.1989, p. 170-172.

Research output: Contribution to journalArticle

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