Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J. Chen, Kei May Lau

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

Original languageEnglish (US)
Pages (from-to)811-814
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

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High electron mobility transistors
high electron mobility transistors
linearity
composite materials
Composite materials
Aluminum Oxide
Cutoff frequency
Transconductance
Power amplifiers
Linearization
Sapphire
Code division multiple access
linear amplifiers
code division multiple access
power efficiency
transconductance
linearization
low currents
power amplifiers
high current

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{4570bae6181d489b975b45edcda2b836,
title = "Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity",
abstract = "We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5{\%} Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45{\%} and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.",
author = "Jie Liu and Yugang Zhou and Rongming Chu and Yong Cai and Chen, {Kevin J.} and Lau, {Kei May}",
year = "2004",
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language = "English (US)",
pages = "811--814",
journal = "Technical Digest - International Electron Devices Meeting",
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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity. / Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin J.; Lau, Kei May.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2004, p. 811-814.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

AU - Liu, Jie

AU - Zhou, Yugang

AU - Chu, Rongming

AU - Cai, Yong

AU - Chen, Kevin J.

AU - Lau, Kei May

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

AB - We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

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M3 - Conference article

SP - 811

EP - 814

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -