Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers

Jie Liu, Zhenyu Jiang, Guanjun You, Zengzhi Pei, Chen Mo, Min Chang, Bangzhi Liu, Jian Xu

Research output: Contribution to journalArticle

Abstract

We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.

Original languageEnglish (US)
Article number8792380
Pages (from-to)3881-3886
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number9
DOIs
StatePublished - Sep 1 2019

Fingerprint

Schottky barrier diodes
Nitrides
Light emitting diodes
Electric lamps
Gallium nitride
Plasma etching
Inductively coupled plasma
Etching
Lighting
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, Jie ; Jiang, Zhenyu ; You, Guanjun ; Pei, Zengzhi ; Mo, Chen ; Chang, Min ; Liu, Bangzhi ; Xu, Jian. / Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 9. pp. 3881-3886.
@article{452f20af58824903884f797d35368988,
title = "Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers",
abstract = "We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.",
author = "Jie Liu and Zhenyu Jiang and Guanjun You and Zengzhi Pei and Chen Mo and Min Chang and Bangzhi Liu and Jian Xu",
year = "2019",
month = "9",
day = "1",
doi = "10.1109/TED.2019.2930467",
language = "English (US)",
volume = "66",
pages = "3881--3886",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers. / Liu, Jie; Jiang, Zhenyu; You, Guanjun; Pei, Zengzhi; Mo, Chen; Chang, Min; Liu, Bangzhi; Xu, Jian.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 9, 8792380, 01.09.2019, p. 3881-3886.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers

AU - Liu, Jie

AU - Jiang, Zhenyu

AU - You, Guanjun

AU - Pei, Zengzhi

AU - Mo, Chen

AU - Chang, Min

AU - Liu, Bangzhi

AU - Xu, Jian

PY - 2019/9/1

Y1 - 2019/9/1

N2 - We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.

AB - We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.

UR - http://www.scopus.com/inward/record.url?scp=85071244454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071244454&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2930467

DO - 10.1109/TED.2019.2930467

M3 - Article

AN - SCOPUS:85071244454

VL - 66

SP - 3881

EP - 3886

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

M1 - 8792380

ER -