Alternating donorlike-acceptorlike configurationally bistable defect in irradiated phosphorus-doped silicon

O. O. Awadelkarim, B. Monemar

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Using deep-level transient spectroscopy we have detected a new configurationally bistable defect in heavily phosphorus-doped silicon, electron irradiated at room temperature. The center has the unique property of being electron attractive in one of its configurations and hole attractive in the other. The activation energies for electron and hole emission for the corresponding traps are determined as 0.42 and 0.15 eV, respectively. The configurational transformation of this center can be activated by the cool-down of the sample under applied zero, forward, or reverse bias, but also by certain electrical pulsing schemes. A general model for the bistable defect as a close deep donor-acceptor pair is suggested, where the configurational transformation is accompanied by a partial internal charge transfer in the neutral charge state of the complex defect.

Original languageEnglish (US)
Pages (from-to)10116-10119
Number of pages4
JournalPhysical Review B
Volume38
Issue number14
DOIs
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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