Alumina films on sapphire crystal show restricted epitaxial growth

Ann M. Kazakos, Sridhar Komarneni, Rustum Roy

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Solid-state epitaxial growth has been demonstrated by forming a thin film of an alumina sol on a single-crystal alumina and firing. Single-crystal and polycrystalline alumina were used here as substrates upon which boehmite sol was deposited by spin coating. The substrates were then dried and fired and characterized by powder X-ray diffraction and scanning electron microscopy. Films on sapphire single crystals showed highly oriented growth while the films on polycrystalline alumina substrates showed random orientation.

Original languageEnglish (US)
Pages (from-to)75-78
Number of pages4
JournalMaterials Letters
Volume10
Issue number1-2
DOIs
StatePublished - Sep 1990

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Alumina films on sapphire crystal show restricted epitaxial growth'. Together they form a unique fingerprint.

  • Cite this