Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

Adetayo V. Adedeji, Ayayi C. Ahyi, John R. Williams, Suzanne E. Mohney, James D. Scofield

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

Original languageEnglish (US)
Pages (from-to)736-740
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number7
DOIs
StatePublished - Jul 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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