A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry