Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

Adetayo V. Adedeji, Ayayi C. Ahyi, John R. Williams, Suzanne E. Mohney, James D. Scofield

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

Original languageEnglish (US)
Pages (from-to)736-740
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2010

Fingerprint

Metallizing
Contacts (fluid mechanics)
ambient temperature
electric contacts
annealing
air
adhesion
Annealing
Air
Adhesion
Schottky diodes
Schottky barrier diodes
Temperature
High temperature applications
platinum
Platinum
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Adedeji, Adetayo V. ; Ahyi, Ayayi C. ; Williams, John R. ; Mohney, Suzanne E. ; Scofield, James D. / Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c. In: Solid-State Electronics. 2010 ; Vol. 54, No. 7. pp. 736-740.
@article{655a34f8e28143ffa7438002283447ab,
title = "Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c",
abstract = "A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.",
author = "Adedeji, {Adetayo V.} and Ahyi, {Ayayi C.} and Williams, {John R.} and Mohney, {Suzanne E.} and Scofield, {James D.}",
year = "2010",
month = "7",
day = "1",
doi = "10.1016/j.sse.2010.03.010",
language = "English (US)",
volume = "54",
pages = "736--740",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7",

}

Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c. / Adedeji, Adetayo V.; Ahyi, Ayayi C.; Williams, John R.; Mohney, Suzanne E.; Scofield, James D.

In: Solid-State Electronics, Vol. 54, No. 7, 01.07.2010, p. 736-740.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

AU - Adedeji, Adetayo V.

AU - Ahyi, Ayayi C.

AU - Williams, John R.

AU - Mohney, Suzanne E.

AU - Scofield, James D.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

AB - A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

UR - http://www.scopus.com/inward/record.url?scp=77955320082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955320082&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.03.010

DO - 10.1016/j.sse.2010.03.010

M3 - Article

AN - SCOPUS:77955320082

VL - 54

SP - 736

EP - 740

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -