AMOLED backplanes of amorphous silicon on steel foils

Alex Z. Kattamis, Noel Christopher Giebink, I. Chun Cheng, Sigurd Wagner, Yongtaek Hong, Vincent Cannella, Stephen R. Forrest

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Thermal, dimensional, and chemical stability make stainless steel foils desirable substrates for flexible AMOLED transistor backplanes. However, the surface roughness and the conductivity of the substrates mean they may not be simple drop-in replacements for glass. We assessed techniques for surface planarization with spin-on glass and benzocyclobutene, and for electrical insulation with silicon dioxide. After the substrates were prepared, active-matrix organic light emitting display (AMOLED) backplanes using hydrogenated amorphous silicon thin-film transistors were fabricated. The backplanes consisted of (48 × 4) × 48 vertical stripe pixels of 92 μm × 369μan with aperture ratio of 48% and resolution of 70ppi. With electron mobilities of up to ∼0.5cm2/Vs the pixel circuits can deliver up to 26μA of current to an electrophosphorescent OLED.

Original languageEnglish (US)
Pages (from-to)108-111
Number of pages4
JournalSID Conference Record of the International Display Research Conference
StatePublished - Dec 1 2006
EventSID 26th International Display Research Conference - Kent, OH, United States
Duration: Sep 18 2006Sep 21 2006

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Amorphous silicon
Metal foil
Display devices
Steel
Substrates
Pixels
Glass
Dimensional stability
Electron mobility
Chemical stability
Organic light emitting diodes (OLED)
Thin film transistors
Insulation
Transistors
Thermodynamic stability
Stainless steel
Surface roughness
Silica
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kattamis, A. Z., Giebink, N. C., Cheng, I. C., Wagner, S., Hong, Y., Cannella, V., & Forrest, S. R. (2006). AMOLED backplanes of amorphous silicon on steel foils. SID Conference Record of the International Display Research Conference, 108-111.
Kattamis, Alex Z. ; Giebink, Noel Christopher ; Cheng, I. Chun ; Wagner, Sigurd ; Hong, Yongtaek ; Cannella, Vincent ; Forrest, Stephen R. / AMOLED backplanes of amorphous silicon on steel foils. In: SID Conference Record of the International Display Research Conference. 2006 ; pp. 108-111.
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Kattamis, AZ, Giebink, NC, Cheng, IC, Wagner, S, Hong, Y, Cannella, V & Forrest, SR 2006, 'AMOLED backplanes of amorphous silicon on steel foils', SID Conference Record of the International Display Research Conference, pp. 108-111.

AMOLED backplanes of amorphous silicon on steel foils. / Kattamis, Alex Z.; Giebink, Noel Christopher; Cheng, I. Chun; Wagner, Sigurd; Hong, Yongtaek; Cannella, Vincent; Forrest, Stephen R.

In: SID Conference Record of the International Display Research Conference, 01.12.2006, p. 108-111.

Research output: Contribution to journalConference article

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T1 - AMOLED backplanes of amorphous silicon on steel foils

AU - Kattamis, Alex Z.

AU - Giebink, Noel Christopher

AU - Cheng, I. Chun

AU - Wagner, Sigurd

AU - Hong, Yongtaek

AU - Cannella, Vincent

AU - Forrest, Stephen R.

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AB - Thermal, dimensional, and chemical stability make stainless steel foils desirable substrates for flexible AMOLED transistor backplanes. However, the surface roughness and the conductivity of the substrates mean they may not be simple drop-in replacements for glass. We assessed techniques for surface planarization with spin-on glass and benzocyclobutene, and for electrical insulation with silicon dioxide. After the substrates were prepared, active-matrix organic light emitting display (AMOLED) backplanes using hydrogenated amorphous silicon thin-film transistors were fabricated. The backplanes consisted of (48 × 4) × 48 vertical stripe pixels of 92 μm × 369μan with aperture ratio of 48% and resolution of 70ppi. With electron mobilities of up to ∼0.5cm2/Vs the pixel circuits can deliver up to 26μA of current to an electrophosphorescent OLED.

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