An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson, M. A. Tischler, T. N. Jackson, M. A. Tischler, K. D. Wise

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Abstract

An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

Original languageEnglish (US)
Pages (from-to)44-45
Number of pages2
JournalIEEE Electron Device Letters
VolumeEDL-2
Issue number2
DOIs
Publication statusPublished - Feb 1981

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