An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson, M. A. Tischler, T. N. Jackson, M. A. Tischler, K. D. Wise

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

Original languageEnglish (US)
Pages (from-to)44-45
Number of pages2
JournalIEEE Electron Device Letters
VolumeEDL-2
Issue number2
DOIs
StatePublished - Feb 1981

Fingerprint

Silicon
Microstructure
Diamines
Ethylene
Dissolution

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Jackson, T. N. ; Tischler, M. A. ; Jackson, T. N. ; Tischler, M. A. ; Wise, K. D. / An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures. In: IEEE Electron Device Letters. 1981 ; Vol. EDL-2, No. 2. pp. 44-45.
@article{b831e2276bfb4b89a980c405fd8757c9,
title = "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures",
abstract = "An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 {\AA}/minute, a factor of over 3000 times less than for unpassivated silicon.",
author = "Jackson, {T. N.} and Tischler, {M. A.} and Jackson, {T. N.} and Tischler, {M. A.} and Wise, {K. D.}",
year = "1981",
month = "2",
doi = "10.1109/EDL.1981.25334",
language = "English (US)",
volume = "EDL-2",
pages = "44--45",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures. / Jackson, T. N.; Tischler, M. A.; Jackson, T. N.; Tischler, M. A.; Wise, K. D.

In: IEEE Electron Device Letters, Vol. EDL-2, No. 2, 02.1981, p. 44-45.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

AU - Jackson, T. N.

AU - Tischler, M. A.

AU - Jackson, T. N.

AU - Tischler, M. A.

AU - Wise, K. D.

PY - 1981/2

Y1 - 1981/2

N2 - An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

AB - An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

UR - http://www.scopus.com/inward/record.url?scp=0002345301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0002345301&partnerID=8YFLogxK

U2 - 10.1109/EDL.1981.25334

DO - 10.1109/EDL.1981.25334

M3 - Article

AN - SCOPUS:0002345301

VL - EDL-2

SP - 44

EP - 45

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

ER -