An electron paramagnetic resonance study of defects in interlay er dielectrics

B. C. Bittel, T. A. Pomorski, Patrick M. Lenahan, S. W. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The electronic properties of thin film low-κ interlayer dielectric (ILD) and etch stop layers (ESL) are important issues in present day ULSI development. Low-κ ILD and ESLs with dielectric constants significantly less than those of SiO2 and SiN are utilized to reduce capacitance induced RC delays in ULSI circuits. Leakage currents, time dependent dielectric breakdown (TDDM) and stress induced leakage currents (SILC) are critical problems that are not yet well understood in ILD. A topic of current interest is ultraviolet light (UV curing) of low-k materials. We have made electron spin resonance (ESR) and current density versus voltage measurements on a moderately extensive set of dielectric/silicon structures involving materials of importance to low-k interconnect systems. Most of the dielectrics studied involve various compositions of SiOC:H. In addition we have also made measurements on other dielectrics including SiO2, SiCN:H and SiN:H.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages747-756
Number of pages10
Edition4
DOIs
StatePublished - Aug 2 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/1/115/6/11

Fingerprint

Paramagnetic resonance
Defects
Leakage currents
ULSI circuits
Voltage measurement
Electric breakdown
Electronic properties
Curing
Permittivity
Current density
Capacitance
Thin films
Silicon
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Bittel, B. C., Pomorski, T. A., Lenahan, P. M., & King, S. W. (2011). An electron paramagnetic resonance study of defects in interlay er dielectrics. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 747-756). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572317
Bittel, B. C. ; Pomorski, T. A. ; Lenahan, Patrick M. ; King, S. W. / An electron paramagnetic resonance study of defects in interlay er dielectrics. Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4. ed. 2011. pp. 747-756 (ECS Transactions; 4).
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Bittel, BC, Pomorski, TA, Lenahan, PM & King, SW 2011, An electron paramagnetic resonance study of defects in interlay er dielectrics. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, pp. 747-756, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting, Montreal, QC, Canada, 5/1/11. https://doi.org/10.1149/1.3572317

An electron paramagnetic resonance study of defects in interlay er dielectrics. / Bittel, B. C.; Pomorski, T. A.; Lenahan, Patrick M.; King, S. W.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4. ed. 2011. p. 747-756 (ECS Transactions; Vol. 35, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The electronic properties of thin film low-κ interlayer dielectric (ILD) and etch stop layers (ESL) are important issues in present day ULSI development. Low-κ ILD and ESLs with dielectric constants significantly less than those of SiO2 and SiN are utilized to reduce capacitance induced RC delays in ULSI circuits. Leakage currents, time dependent dielectric breakdown (TDDM) and stress induced leakage currents (SILC) are critical problems that are not yet well understood in ILD. A topic of current interest is ultraviolet light (UV curing) of low-k materials. We have made electron spin resonance (ESR) and current density versus voltage measurements on a moderately extensive set of dielectric/silicon structures involving materials of importance to low-k interconnect systems. Most of the dielectrics studied involve various compositions of SiOC:H. In addition we have also made measurements on other dielectrics including SiO2, SiCN:H and SiN:H.

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Bittel BC, Pomorski TA, Lenahan PM, King SW. An electron paramagnetic resonance study of defects in interlay er dielectrics. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 ed. 2011. p. 747-756. (ECS Transactions; 4). https://doi.org/10.1149/1.3572317