An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

Patrick M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.

Original languageEnglish (US)
Pages (from-to)1457-1460
Number of pages4
JournalJournal of Applied Physics
Volume54
Issue number3
DOIs
StatePublished - Dec 1 1983

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electron paramagnetic resonance
radiation
defects
annealing
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "We have compared the generation of radiation-induced Pb ({"}trivalent silicon{"}) centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.",
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An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface. / Lenahan, Patrick M.; Dressendorfer, P. V.

In: Journal of Applied Physics, Vol. 54, No. 3, 01.12.1983, p. 1457-1460.

Research output: Contribution to journalArticle

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T1 - An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

AU - Lenahan, Patrick M.

AU - Dressendorfer, P. V.

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N2 - We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.

AB - We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.

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