We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)