This letter reports the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor technology. Selective area epitaxy was employed to have both GaN N-channel MOSFET (NMOS) and P-channel MOSFET (PMOS) structures on the same wafer. An AlN/SiN dielectric stack grown by metal-organic chemical vapor deposition served as the gate oxide for both NMOS and PMOS, yielding enhancement-mode N- and P-channel with the electron mobility of 300 cm2/V-s and hole mobility of 20 cm2/V-s, respectively. Using the GaN CMOS technology, a functional inverter integrated circuit was fabricated and characterized.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Mar 2016|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering