An experimental investigation on high voltage GaAs photoconductive semiconductor switch

Chia En Yang, Jimmy Yao, Yun Ching Chang, Shizhuo Yin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.

    Original languageEnglish (US)
    Title of host publicationPhotonic Fiber and Crystal Devices
    Subtitle of host publicationAdvances in Materials and Innovations in Device Applications IV
    DOIs
    StatePublished - Oct 18 2010
    EventPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV - San Diego, CA, United States
    Duration: Aug 1 2010Aug 2 2010

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume7781
    ISSN (Print)0277-786X

    Other

    OtherPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV
    CountryUnited States
    CitySan Diego, CA
    Period8/1/108/2/10

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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  • Cite this

    Yang, C. E., Yao, J., Chang, Y. C., & Yin, S. (2010). An experimental investigation on high voltage GaAs photoconductive semiconductor switch. In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV [778112] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7781). https://doi.org/10.1117/12.862144