An experimental study of contact effects in organic thin film transistors

D. J. Gundlach, L. Zhou, J. A. Nichols, Thomas Nelson Jackson, P. V. Necliudov, M. S. Shur

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Abstract

We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 μm.

Original languageEnglish (US)
Article number024509
JournalJournal of Applied Physics
Volume100
Issue number2
DOIs
StatePublished - Aug 11 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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