An improved in-based ohmic contact to n-GaSb

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

Original languageEnglish (US)
Pages (from-to)1667-1672
Number of pages6
JournalSolid-State Electronics
Volume48
Issue number9
DOIs
StatePublished - Sep 1 2004

Fingerprint

Ohmic contacts
Contact resistance
contact resistance
electric contacts
Surface morphology
Metals
Annealing
Semiconductor materials
Transmission electron microscopy
transmission electron microscopy
annealing
metals
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.",
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An improved in-based ohmic contact to n-GaSb. / Robinson, Joshua Alexander; Mohney, Suzanne E.

In: Solid-State Electronics, Vol. 48, No. 9, 01.09.2004, p. 1667-1672.

Research output: Contribution to journalArticle

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AU - Robinson, Joshua Alexander

AU - Mohney, Suzanne E.

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AB - A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

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