An improved in-based ohmic contact to n-GaSb

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

Original languageEnglish (US)
Pages (from-to)1667-1672
Number of pages6
JournalSolid-State Electronics
Volume48
Issue number9
DOIs
StatePublished - Sep 1 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'An improved in-based ohmic contact to n-GaSb'. Together they form a unique fingerprint.

  • Cite this