An optical method for evaluation of the net acceptor concentration in p-type ZnSe

B. Hu, A. Yin, G. Karczewski, H. Luo, S. W. Short, N. Samarth, M. Dobrowolska, J. K. Furdyna

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Abstract

We report photoluminescence (PL) results obtained on p-type ZnSe epilayers grown by molecular beam epitaxy. As an acceptor dopant, we used an active nitrogen beam produced by a free radical nitrogen source. On the basis of a detailed analysis of PL data we propose a simple semiquantitative method for a quick and contactless evaluation of the net acceptor concentration in p-type ZnSe. In particular, we show that the intensity ratio of the donor-acceptor pair (DAP) emission to the acceptor-bound exciton (I1) emission strongly depends on both the excitation power and the quality of the sample, and because of that it cannot by itself be regarded as a good measure of the net acceptor concentration. On the other hand, the intensity of the DAP emission under saturation excitation shows a simple direct proportionality to the net acceptor concentration, thus providing a reliable tool for determining the relative doping level in p-type ZnSe films.

Original languageEnglish (US)
Pages (from-to)4153-4157
Number of pages5
JournalJournal of Applied Physics
Volume74
Issue number6
DOIs
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Hu, B., Yin, A., Karczewski, G., Luo, H., Short, S. W., Samarth, N., Dobrowolska, M., & Furdyna, J. K. (1993). An optical method for evaluation of the net acceptor concentration in p-type ZnSe. Journal of Applied Physics, 74(6), 4153-4157. https://doi.org/10.1063/1.354418