An optically pumped GaN-AlGaN vertical cavity surface emitting laser

Joan M. Redwing, David A.S. Loeber, Neal G. Anderson, Michael A. Tischler, Jeffrey S. Flynn

Research output: Contribution to journalArticle

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Abstract

An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0 MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

Original languageEnglish (US)
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number1
DOIs
StatePublished - Jul 1 1996

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surface emitting lasers
cavities
spacing
pumps
nitrogen lasers
laser modes
Bragg reflectors
vapor phase epitaxy
sapphire
electromagnetism
photoluminescence
room temperature
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Redwing, J. M., Loeber, D. A. S., Anderson, N. G., Tischler, M. A., & Flynn, J. S. (1996). An optically pumped GaN-AlGaN vertical cavity surface emitting laser. Applied Physics Letters, 69(1), 1-3. https://doi.org/10.1063/1.118104
Redwing, Joan M. ; Loeber, David A.S. ; Anderson, Neal G. ; Tischler, Michael A. ; Flynn, Jeffrey S. / An optically pumped GaN-AlGaN vertical cavity surface emitting laser. In: Applied Physics Letters. 1996 ; Vol. 69, No. 1. pp. 1-3.
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Redwing, JM, Loeber, DAS, Anderson, NG, Tischler, MA & Flynn, JS 1996, 'An optically pumped GaN-AlGaN vertical cavity surface emitting laser', Applied Physics Letters, vol. 69, no. 1, pp. 1-3. https://doi.org/10.1063/1.118104

An optically pumped GaN-AlGaN vertical cavity surface emitting laser. / Redwing, Joan M.; Loeber, David A.S.; Anderson, Neal G.; Tischler, Michael A.; Flynn, Jeffrey S.

In: Applied Physics Letters, Vol. 69, No. 1, 01.07.1996, p. 1-3.

Research output: Contribution to journalArticle

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N2 - An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0 MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

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