An optically pumped GaN-AlGaN vertical cavity surface emitting laser

Joan Marie Redwing, D. A S Loeber, Neal G. Anderson, Michael A. Tischler, Jeffrey S. Flynn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al 0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

Original languageEnglish (US)
Pages (from-to)1
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995

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surface emitting lasers
cavities
spacing
pumps
nitrogen lasers
laser modes
Bragg reflectors
vapor phase epitaxy
sapphire
electromagnetism
photoluminescence
room temperature
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Redwing, J. M., Loeber, D. A. S., Anderson, N. G., Tischler, M. A., & Flynn, J. S. (1995). An optically pumped GaN-AlGaN vertical cavity surface emitting laser. Applied Physics Letters, 1.
Redwing, Joan Marie ; Loeber, D. A S ; Anderson, Neal G. ; Tischler, Michael A. ; Flynn, Jeffrey S. / An optically pumped GaN-AlGaN vertical cavity surface emitting laser. In: Applied Physics Letters. 1995 ; pp. 1.
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abstract = "An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al 0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0MW/cm2, a narrow (<5 {\AA}) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.",
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Redwing, JM, Loeber, DAS, Anderson, NG, Tischler, MA & Flynn, JS 1995, 'An optically pumped GaN-AlGaN vertical cavity surface emitting laser', Applied Physics Letters, pp. 1.

An optically pumped GaN-AlGaN vertical cavity surface emitting laser. / Redwing, Joan Marie; Loeber, D. A S; Anderson, Neal G.; Tischler, Michael A.; Flynn, Jeffrey S.

In: Applied Physics Letters, 1995, p. 1.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An optically pumped GaN-AlGaN vertical cavity surface emitting laser

AU - Redwing, Joan Marie

AU - Loeber, D. A S

AU - Anderson, Neal G.

AU - Tischler, Michael A.

AU - Flynn, Jeffrey S.

PY - 1995

Y1 - 1995

N2 - An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al 0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

AB - An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al 0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

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