An oxygen-compatible radiant substrate heater for thin film growth at substrate temperatures up to 1050 °C

J. C. Clark, J. P. Maria, K. J. Hubbard, D. G. Schlom

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The design and performance of a radiative substrate heater that operates under vacuum in a highly oxidizing environment is described. Using this heater, substrate temperatures exceeding 1050°C are readily achieved. These are the highest temperatures reported for a pulsed laser deposition (PLD) heater that operates in an oxidizing ambient. This heater was designed for the growth of oxide thin films by PLD, but the design concept is suitable for other vacuum deposition methods requiring high substrate temperatures to be achieved in an oxidizing environment. In addition to the high substrate temperatures achievable, the design described enables easy switching between on-axis PLD and off-axis PLD (allowing both sides of the wafer to be coated in the same growth) and allows the target-to-substrate distance to be easily adjusted from outside the chamber.

Original languageEnglish (US)
Pages (from-to)2538-2541
Number of pages4
JournalReview of Scientific Instruments
Volume68
Issue number6
DOIs
StatePublished - Jun 1997

All Science Journal Classification (ASJC) codes

  • Instrumentation

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