An STM study of the Si(0 0 1)(2 × 4)-Dy surface

B. Z. Liu; J. Nogami

doi:10.1016/S0039-6028(01)01159-1

An STM study of the Si(0 0 1)(2 × 4)-Dy surface

B. Z. Liu, J. Nogami

Nanofabrication Laboratory

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Dy grows on the Si(0 0 1) surface in a Stranski-Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2 × 4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.

Original language	English (US)
Pages (from-to)	399-405
Number of pages	7
Journal	Surface Science
Volume	488
Issue number	3
DOIs	https://doi.org/10.1016/S0039-6028(01)01159-1
State	Published - Aug 10 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "An STM study of the Si(0 0 1)(2 × 4)-Dy surface",

abstract = "Dy grows on the Si(0 0 1) surface in a Stranski-Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2 × 4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.",

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N2 - Dy grows on the Si(0 0 1) surface in a Stranski-Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2 × 4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.

AB - Dy grows on the Si(0 0 1) surface in a Stranski-Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2 × 4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.

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