An STM study of the Si(0 0 1)(2 × 4)-Dy surface

B. Z. Liu, J. Nogami

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Dy grows on the Si(0 0 1) surface in a Stranski-Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2 × 4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.

Original languageEnglish (US)
Pages (from-to)399-405
Number of pages7
JournalSurface Science
Volume488
Issue number3
DOIs
StatePublished - Aug 10 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'An STM study of the Si(0 0 1)(2 × 4)-Dy surface'. Together they form a unique fingerprint.

Cite this