Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver

Mei Liang, Yan Li, Trillion Q. Zheng, Hongyan Zhao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Because of higher switching speed of SiC MOSFET, crosstalk in a phase-leg configuration will be more serious. It will hinder the increase of switching frequency and reduce the reliability of power electronic equipment. This paper analyzes the crosstalk mechanisms of non-Kelvin package and Kelvin package, respectively. During the turn-on transition and turn-off transition of a switch, the displacement current of the gate-drain capacitor and the drop voltages on the common source inductors can induce the gate-source voltage variation of the off-state switch. Then, this paper proposes a new gate driver for suppressing crosstalk, which creates the low turn-off gate impedance. The operating principle and the parameters design are also analyzed. Finally, the crosstalk problems in non-Kelvin package and Kelvin package are tested by experiments. The experimental results of the proposed driver prove the effect of crosstalk suppression.

Original languageEnglish (US)
Pages (from-to)162-174
Number of pages13
JournalDiangong Jishu Xuebao/Transactions of China Electrotechnical Society
Volume32
Issue number18
DOIs
StatePublished - Sep 25 2017

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Crosstalk
Switches
Switching frequency
Power electronics
Capacitors
Electronic equipment
Electric potential
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

@article{3c09f4f494c6406492418b12778cb465,
title = "Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver",
abstract = "Because of higher switching speed of SiC MOSFET, crosstalk in a phase-leg configuration will be more serious. It will hinder the increase of switching frequency and reduce the reliability of power electronic equipment. This paper analyzes the crosstalk mechanisms of non-Kelvin package and Kelvin package, respectively. During the turn-on transition and turn-off transition of a switch, the displacement current of the gate-drain capacitor and the drop voltages on the common source inductors can induce the gate-source voltage variation of the off-state switch. Then, this paper proposes a new gate driver for suppressing crosstalk, which creates the low turn-off gate impedance. The operating principle and the parameters design are also analyzed. Finally, the crosstalk problems in non-Kelvin package and Kelvin package are tested by experiments. The experimental results of the proposed driver prove the effect of crosstalk suppression.",
author = "Mei Liang and Yan Li and Zheng, {Trillion Q.} and Hongyan Zhao",
year = "2017",
month = "9",
day = "25",
doi = "10.19595/j.cnki.1000-6753.tces.L70527",
language = "English (US)",
volume = "32",
pages = "162--174",
journal = "Diangong Jishu Xuebao/Transactions of China Electrotechnical Society",
issn = "1000-6753",
publisher = "Chinese Machine Press",
number = "18",

}

Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver. / Liang, Mei; Li, Yan; Zheng, Trillion Q.; Zhao, Hongyan.

In: Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, Vol. 32, No. 18, 25.09.2017, p. 162-174.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver

AU - Liang, Mei

AU - Li, Yan

AU - Zheng, Trillion Q.

AU - Zhao, Hongyan

PY - 2017/9/25

Y1 - 2017/9/25

N2 - Because of higher switching speed of SiC MOSFET, crosstalk in a phase-leg configuration will be more serious. It will hinder the increase of switching frequency and reduce the reliability of power electronic equipment. This paper analyzes the crosstalk mechanisms of non-Kelvin package and Kelvin package, respectively. During the turn-on transition and turn-off transition of a switch, the displacement current of the gate-drain capacitor and the drop voltages on the common source inductors can induce the gate-source voltage variation of the off-state switch. Then, this paper proposes a new gate driver for suppressing crosstalk, which creates the low turn-off gate impedance. The operating principle and the parameters design are also analyzed. Finally, the crosstalk problems in non-Kelvin package and Kelvin package are tested by experiments. The experimental results of the proposed driver prove the effect of crosstalk suppression.

AB - Because of higher switching speed of SiC MOSFET, crosstalk in a phase-leg configuration will be more serious. It will hinder the increase of switching frequency and reduce the reliability of power electronic equipment. This paper analyzes the crosstalk mechanisms of non-Kelvin package and Kelvin package, respectively. During the turn-on transition and turn-off transition of a switch, the displacement current of the gate-drain capacitor and the drop voltages on the common source inductors can induce the gate-source voltage variation of the off-state switch. Then, this paper proposes a new gate driver for suppressing crosstalk, which creates the low turn-off gate impedance. The operating principle and the parameters design are also analyzed. Finally, the crosstalk problems in non-Kelvin package and Kelvin package are tested by experiments. The experimental results of the proposed driver prove the effect of crosstalk suppression.

UR - http://www.scopus.com/inward/record.url?scp=85031120260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031120260&partnerID=8YFLogxK

U2 - 10.19595/j.cnki.1000-6753.tces.L70527

DO - 10.19595/j.cnki.1000-6753.tces.L70527

M3 - Article

AN - SCOPUS:85031120260

VL - 32

SP - 162

EP - 174

JO - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

JF - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

SN - 1000-6753

IS - 18

ER -