The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Applied Physics|
|State||Published - Jan 1 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)