Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Morgan E. Ware, Robert J. Nemanich, Jennifer Lynn Gray, Robert Hull

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Abstract

The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.

Original languageEnglish (US)
Pages (from-to)115-122
Number of pages8
JournalJournal of Applied Physics
Volume95
Issue number1
DOIs
Publication statusPublished - Jan 1 2004

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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