Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Morgan E. Ware, Robert J. Nemanich, Jennifer Lynn Gray, Robert Hull

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.

Original languageEnglish (US)
Pages (from-to)115-122
Number of pages8
JournalJournal of Applied Physics
Volume95
Issue number1
DOIs
StatePublished - Jan 1 2004

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epitaxy
hatches
triangles
intersections
plastics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates. / Ware, Morgan E.; Nemanich, Robert J.; Gray, Jennifer Lynn; Hull, Robert.

In: Journal of Applied Physics, Vol. 95, No. 1, 01.01.2004, p. 115-122.

Research output: Contribution to journalArticle

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