Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN

B. P. Luther, J. M. DeLucca, S. E. Mohney, R. F. Karlicek

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Abstract

Using high resolution transmission electron miscroscopy, a thin pseudomorphic AlN layer (2-3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600°C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 Å and an a-plane (100) spacing matching that of GaN (2.76 Å), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600°C and may be the cause.

Original languageEnglish (US)
Pages (from-to)3859-3861
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number26
DOIs
StatePublished - Dec 29 1997

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electric contacts
spacing
chemical analysis
x ray spectroscopy
causes
high resolution
metals
electrons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Luther, B. P. ; DeLucca, J. M. ; Mohney, S. E. ; Karlicek, R. F. / Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN. In: Applied Physics Letters. 1997 ; Vol. 71, No. 26. pp. 3859-3861.
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abstract = "Using high resolution transmission electron miscroscopy, a thin pseudomorphic AlN layer (2-3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600°C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 {\AA} and an a-plane (100) spacing matching that of GaN (2.76 {\AA}), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600°C and may be the cause.",
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Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN. / Luther, B. P.; DeLucca, J. M.; Mohney, S. E.; Karlicek, R. F.

In: Applied Physics Letters, Vol. 71, No. 26, 29.12.1997, p. 3859-3861.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN

AU - Luther, B. P.

AU - DeLucca, J. M.

AU - Mohney, S. E.

AU - Karlicek, R. F.

PY - 1997/12/29

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AB - Using high resolution transmission electron miscroscopy, a thin pseudomorphic AlN layer (2-3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600°C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 Å and an a-plane (100) spacing matching that of GaN (2.76 Å), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600°C and may be the cause.

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