Using high resolution transmission electron miscroscopy, a thin pseudomorphic AlN layer (2-3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600°C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 Å and an a-plane (100) spacing matching that of GaN (2.76 Å), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600°C and may be the cause.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 29 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)