Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Weihua Guan, Shibing Long, Rui Jia, Qi Liu, Yuan Hu, Qin Wang, Ming Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

Original languageEnglish (US)
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages141-144
Number of pages4
DOIs
StatePublished - Dec 1 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, Province of China
Duration: Dec 20 2007Dec 22 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan, Province of China
CityTainan
Period12/20/0712/22/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories'. Together they form a unique fingerprint.

Cite this