Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Weihua Guan, Shibing Long, Rui Jia, Qi Liu, Yuan Hu, Qin Wang, Ming Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

Original languageEnglish (US)
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages141-144
Number of pages4
DOIs
StatePublished - Dec 1 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, Province of China
Duration: Dec 20 2007Dec 22 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan, Province of China
CityTainan
Period12/20/0712/22/07

Fingerprint

Nanocrystals
Metals
Semiconductor materials
Data storage equipment
Quantum confinement
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Guan, W., Long, S., Jia, R., Liu, Q., Hu, Y., Wang, Q., & Liu, M. (2007). Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 141-144). [4450082] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450082
Guan, Weihua ; Long, Shibing ; Jia, Rui ; Liu, Qi ; Hu, Yuan ; Wang, Qin ; Liu, Ming. / Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. pp. 141-144 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).
@inproceedings{695f57cdd835421a999447dc0be92346,
title = "Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories",
abstract = "A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.",
author = "Weihua Guan and Shibing Long and Rui Jia and Qi Liu and Yuan Hu and Qin Wang and Ming Liu",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/EDSSC.2007.4450082",
language = "English (US)",
isbn = "1424406374",
series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",
pages = "141--144",
booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

}

Guan, W, Long, S, Jia, R, Liu, Q, Hu, Y, Wang, Q & Liu, M 2007, Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450082, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 141-144, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, Province of China, 12/20/07. https://doi.org/10.1109/EDSSC.2007.4450082

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. / Guan, Weihua; Long, Shibing; Jia, Rui; Liu, Qi; Hu, Yuan; Wang, Qin; Liu, Ming.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 141-144 4450082 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

AU - Guan, Weihua

AU - Long, Shibing

AU - Jia, Rui

AU - Liu, Qi

AU - Hu, Yuan

AU - Wang, Qin

AU - Liu, Ming

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

AB - A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

UR - http://www.scopus.com/inward/record.url?scp=43049156179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049156179&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450082

DO - 10.1109/EDSSC.2007.4450082

M3 - Conference contribution

AN - SCOPUS:43049156179

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 141

EP - 144

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

ER -

Guan W, Long S, Jia R, Liu Q, Hu Y, Wang Q et al. Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 141-144. 4450082. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450082