Analysis of compositionally and structurally graded Si:H and Si 1-xGe x:H thin films by real time spectroscopic ellipsometry

Nikolas J. Podraza, Jing Li, Christopher R. Wronski, Mark W. Horn, Elizabeth C. Dickey, Robert W. Collins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-x-Ge x:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry (RTSE). A two-layer virtual interface analysis has been applied to study the structural evolution of Si:H films prepared in multistep processes utilizing alternating layers of high and low H 2-dilution materials, which have been designed to produce predominantly amorphous silicon (a-Si:H) films with a controlled distribution of microcrystallites. The compositional evolution of alloy-graded a-Si 1-x-iGe xH has been studied as well using similar methods. In each study, the depth profile of the microcrystalline silicon (μc-Si:H) content,f μc, or the Ge content, x, has been extracted. Additionally, RTSE has been used to monitor post-deposition exposure of a-Si:H, a-Si 1-xGe x:H, and a-Ge:H films to hydrogen plasmas in situ in order to study the sub-surface modification and etching that would be anticipated when a highly H 2-diluted layer is deposited on a layer prepared with lower dilution. These analyses provide guidance for enhancing the performance of Si:H based solar cells through controlled fractions of microcrystallites in bulk amorphous i-layer materials using modulated H 2 dilution, through controlled bandgap profiling using compositionally graded a-Si 1-xGe x:H, and through a better understanding of the modification of underlying layers during the deposition of subsequent layers in multilayer stacks.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
Pages253-258
Number of pages6
StatePublished - Dec 1 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 24 2008Mar 28 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1066
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/24/083/28/08

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Podraza, N. J., Li, J., Wronski, C. R., Horn, M. W., Dickey, E. C., & Collins, R. W. (2008). Analysis of compositionally and structurally graded Si:H and Si 1-xGe x:H thin films by real time spectroscopic ellipsometry. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008 (pp. 253-258). (Materials Research Society Symposium Proceedings; Vol. 1066).