Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques

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Abstract

Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. However, due to surface non-homogeneity, the current-voltage characteristics of SiC SBDs are mostly non-ideal, and conventional analysis based on simple thermionic theory often leads to erroneous conclusions. In this work, we examine current-voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on non-uniform barrier height analysis approaches. These algorithms are based on "threshold-accepting simulated-annealing" techniques. The fitting yields a parameter set that is argued to better describe diode behavior: this parameter set is suggested to replace the average barrier height and the ideality factor often obtained from conventional Schottky diode analysis.

Original languageEnglish (US)
Pages (from-to)644-649
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number5
DOIs
StatePublished - May 1 2007

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simulated annealing
Schottky diodes
Simulated annealing
Diodes
thresholds
Electric potential
electric potential
diodes
Schottky barrier diodes
thermionics
Electron mobility
power loss
Current voltage characteristics
Power electronics
electron mobility
Temperature
temperature
inhomogeneity
Metals
electronics

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques",
abstract = "Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. However, due to surface non-homogeneity, the current-voltage characteristics of SiC SBDs are mostly non-ideal, and conventional analysis based on simple thermionic theory often leads to erroneous conclusions. In this work, we examine current-voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on non-uniform barrier height analysis approaches. These algorithms are based on {"}threshold-accepting simulated-annealing{"} techniques. The fitting yields a parameter set that is argued to better describe diode behavior: this parameter set is suggested to replace the average barrier height and the ideality factor often obtained from conventional Schottky diode analysis.",
author = "K. Sarpatwari and Passmore, {Lucas Jay} and Suliman, {Samia A.} and Awadelkarim, {Osama O.}",
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TY - JOUR

T1 - Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques

AU - Sarpatwari, K.

AU - Passmore, Lucas Jay

AU - Suliman, Samia A.

AU - Awadelkarim, Osama O.

PY - 2007/5/1

Y1 - 2007/5/1

N2 - Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. However, due to surface non-homogeneity, the current-voltage characteristics of SiC SBDs are mostly non-ideal, and conventional analysis based on simple thermionic theory often leads to erroneous conclusions. In this work, we examine current-voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on non-uniform barrier height analysis approaches. These algorithms are based on "threshold-accepting simulated-annealing" techniques. The fitting yields a parameter set that is argued to better describe diode behavior: this parameter set is suggested to replace the average barrier height and the ideality factor often obtained from conventional Schottky diode analysis.

AB - Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. However, due to surface non-homogeneity, the current-voltage characteristics of SiC SBDs are mostly non-ideal, and conventional analysis based on simple thermionic theory often leads to erroneous conclusions. In this work, we examine current-voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on non-uniform barrier height analysis approaches. These algorithms are based on "threshold-accepting simulated-annealing" techniques. The fitting yields a parameter set that is argued to better describe diode behavior: this parameter set is suggested to replace the average barrier height and the ideality factor often obtained from conventional Schottky diode analysis.

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