TY - JOUR
T1 - Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model
AU - Liang, Yuhua
AU - Li, Xueqing
AU - Gupta, Sumeet Kumar
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Funding Information:
Manuscript received July 27, 2018; revised September 14, 2018; accepted October 2, 2018. Date of publication October 29, 2018; date of current version November 26, 2018. This work was supported in part by the National Science Foundation of China under Grants 61604111, 61874066, and 61720106013, in part by the Beijing Innovation Center for Future Chip, and in part by the SRC JUMP Center for Research on Intelligent Storage and Processing-in-Memory. The review of this paper was arranged by Editor B. K. Kaushik. (Corresponding authors: Y. Liang; V. Narayanan.) Y. Liang is with the Shaanxi Key Laboratory of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi’an 710071, China (e-mail: yhliang@xidian.edu.cn).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/12
Y1 - 2018/12
N2 - In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.
AB - In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.
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U2 - 10.1109/TED.2018.2875661
DO - 10.1109/TED.2018.2875661
M3 - Article
AN - SCOPUS:85055710618
VL - 65
SP - 5525
EP - 5529
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 8513804
ER -