Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model

Yuhua Liang, Xueqing Li, Sumeet Kumar Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticle

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In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.

Original languageEnglish (US)
Article number8513804
Pages (from-to)5525-5529
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 2018


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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