Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model

Yuhua Liang; Xueqing Li; Sumeet Kumar Gupta; Suman Datta; Vijaykrishnan Narayanan

doi:10.1109/TED.2018.2875661

Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model

Yuhua Liang, Xueqing Li, Sumeet Kumar Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.

Original language	English (US)
Article number	8513804
Pages (from-to)	5525-5529
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	12
DOIs	https://doi.org/10.1109/TED.2018.2875661
State	Published - Dec 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model",

abstract = "In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.",

author = "Yuhua Liang and Xueqing Li and Gupta, {Sumeet Kumar} and Suman Datta and Vijaykrishnan Narayanan",

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AU - Liang, Yuhua

AU - Li, Xueqing

AU - Gupta, Sumeet Kumar

AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

PY - 2018/12

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N2 - In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate charge of the MOSFET and the charge reserved by the ferroelectric layer and includes the parasitic resistance and capacitance into consideration. Based on the model, the drain-induced barrier lowering (DIBL) and the negative resistance (NR) of the NCFET are analyzed. Finally, taking two well-known analog blocks (the current mirror and the latch comparator) for example, impacts of the DIBL effect and the NR property on analog circuit performances are discussed. Thanks to utilization of the NR feature, not only can impacts of the DIBL effect and the channel-length modulation (CLM) effect be alleviated to improve the mirroring accuracy, but also the comparison speed of the latch comparator be accelerated.

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