Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method

Guoping Cao, Ye Cao, Houbing Huang, Long Qing Chen, Xingqiao Ma

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.

Original languageEnglish (US)
Pages (from-to)208-213
Number of pages6
JournalComputational Materials Science
Volume115
DOIs
StatePublished - Apr 1 2016

Fingerprint

Phase Field
Ferroelectric materials
Thin Films
Thin films
thin films
Path
Phase Field Model
ferroelectric materials
Electric Field
Polarization
Electric fields
electric fields
polarization
Energy

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Computational Mathematics

Cite this

Cao, Guoping ; Cao, Ye ; Huang, Houbing ; Chen, Long Qing ; Ma, Xingqiao. / Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method. In: Computational Materials Science. 2016 ; Vol. 115. pp. 208-213.
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Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method. / Cao, Guoping; Cao, Ye; Huang, Houbing; Chen, Long Qing; Ma, Xingqiao.

In: Computational Materials Science, Vol. 115, 01.04.2016, p. 208-213.

Research output: Contribution to journalArticle

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AU - Cao, Ye

AU - Huang, Houbing

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AB - A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.

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