Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method

Fangwei Zhao, Yan Li, Qing Tang, Lu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

For the excellent electrical performance, Gallium Nitride (GaN) new-type semiconductor devices are preferred in high voltage, high frequency and high power applications. However, GaN devices have low on-resistance and the loop layout requires low damping in high frequency loop. These both can lead to voltage and current oscillations under high frequency and even cause uncontrollable oscillations, which limit the application of GaN devices in high frequency occasions especially in bridge circuits. Based on existing literatures, this paper analyzed the generation mechanism of oscillation and proposed two oscillation inducements, which are false turn-on caused by driving oscillation of the passive transistor and Cascode structure. According to the oscillation inducements, several methods are provided and have been verified by simulation and experimental results.

Original languageEnglish (US)
Title of host publication2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages391-398
Number of pages8
ISBN (Electronic)9781509029983
DOIs
StatePublished - Nov 3 2017
Event9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume2017-January

Other

Other9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
CountryUnited States
CityCincinnati
Period10/1/1710/5/17

Fingerprint

Gallium nitride
Nitrides
Ferrite
Oscillation
Bridge circuits
Electric potential
Semiconductor devices
Transistors
Damping
Voltage
Semiconductor Devices
High Power
Layout
Experimental Results
Simulation

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization

Cite this

Zhao, F., Li, Y., Tang, Q., & Wang, L. (2017). Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017 (pp. 391-398). [8095809] (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2017.8095809
Zhao, Fangwei ; Li, Yan ; Tang, Qing ; Wang, Lu. / Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method. 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 391-398 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017).
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abstract = "For the excellent electrical performance, Gallium Nitride (GaN) new-type semiconductor devices are preferred in high voltage, high frequency and high power applications. However, GaN devices have low on-resistance and the loop layout requires low damping in high frequency loop. These both can lead to voltage and current oscillations under high frequency and even cause uncontrollable oscillations, which limit the application of GaN devices in high frequency occasions especially in bridge circuits. Based on existing literatures, this paper analyzed the generation mechanism of oscillation and proposed two oscillation inducements, which are false turn-on caused by driving oscillation of the passive transistor and Cascode structure. According to the oscillation inducements, several methods are provided and have been verified by simulation and experimental results.",
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Zhao, F, Li, Y, Tang, Q & Wang, L 2017, Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method. in 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017., 8095809, 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 391-398, 9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017, Cincinnati, United States, 10/1/17. https://doi.org/10.1109/ECCE.2017.8095809

Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method. / Zhao, Fangwei; Li, Yan; Tang, Qing; Wang, Lu.

2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 391-398 8095809 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - For the excellent electrical performance, Gallium Nitride (GaN) new-type semiconductor devices are preferred in high voltage, high frequency and high power applications. However, GaN devices have low on-resistance and the loop layout requires low damping in high frequency loop. These both can lead to voltage and current oscillations under high frequency and even cause uncontrollable oscillations, which limit the application of GaN devices in high frequency occasions especially in bridge circuits. Based on existing literatures, this paper analyzed the generation mechanism of oscillation and proposed two oscillation inducements, which are false turn-on caused by driving oscillation of the passive transistor and Cascode structure. According to the oscillation inducements, several methods are provided and have been verified by simulation and experimental results.

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Zhao F, Li Y, Tang Q, Wang L. Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 391-398. 8095809. (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017). https://doi.org/10.1109/ECCE.2017.8095809