Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

N. J. Podraza, Jing Li, C. R. Wronski, E. C. Dickey, M. W. Horn, R. W. Collins

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

Original languageEnglish (US)
Pages (from-to)892-895
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number4
DOIs
StatePublished - Apr 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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